FGY4LxxT120SWD N-Channel 1200V IGBTs

onsemi FGY4LxxT120SWD N-Channel 1200V IGBTs use the novel field stop 7th generation IGBT technology and the Gen7 Diode in a TO-247 4−lead package. The onsemi FGY4LxxT120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like solar inverter, UPS and ESS.

Results: 4
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (AUD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
onsemi IGBTs 1200V 140A FS7 IGBT TP247-4L
Datasheet
180In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.7 V 20 V 200 A 1.25 kW - 55 C + 175 C FGY4L140T120SWD Tube
onsemi IGBTs 1200V 160A FS7 IGBT TP247-4L
Datasheet
176In Stock
240Expected 10/04/2026
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.7 V 20 V 200 A 1.5 kW - 55 C + 175 C FGY4L160T120SWD Tube
onsemi IGBTs 1200V 100A FS7 IGBT TP247-4L
Datasheet
49In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.7 V 20 V 200 A 1.071 kW - 55 C + 175 C FGY4L100T120SWD Tube
onsemi IGBTs 1200V 75A FS7 IGBT TP247-4L
Datasheet
59In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.37 V 20 V 150 A 652 W - 55 C + 175 C FGY4L75T120SWD Tube