The inherent I/Q architecture of the HMC8192LG offers excellent image rejection, eliminating the need for expensive filtering for unwanted sidebands. The mixer also provides excellent LO to RF and LO to IF isolation, and reduces the effect of LO leakage to ensure signal integrity.
As a passive mixer, the HMC8192LG does not require any DC power sources. The HMC8192LG offers a lower noise figure compared to an active mixer, ensuring superior dynamic range for high performance and precision applications.
The HMC8192LG is fabricated on a gallium arsenide (GaAs), metal-semiconductor field-effect transistor (MESFET) process and uses Analog Devices, Inc. mixer cells and a 90° hybrid. The HMC8192LG is available in a compact, 4.00mm x 4.00mm, 25-terminal land grid array cavity (LGA_CAV) package and operates over a -40°C to +85°C temperature range.